Sign Up to our social questions and Answers Engine to ask questions, answer people’s questions, and connect with other people.
Login to our social questions & Answers Engine to ask questions answer people’s questions & connect with other people.
Lost your password? Please enter your email address. You will receive a link and will create a new password via email.
Please briefly explain why you feel this question should be reported.
Please briefly explain why you feel this answer should be reported.
Please briefly explain why you feel this user should be reported.
Choose the correct statement a) IGBTs have higher switching losses as compared to BJTs b) IGBTs have secondary breakdown problems c) IGBTs have lower gate drive requirements d) IGBTs are current controlled devices
c Explanation: Due to its high gate impedance, IGBTs require less gate drive current.
c
See lessExplanation: Due to its high gate impedance, IGBTs require less gate drive current.
In an IGBT, during the turn-on time a) Vge decreases b) Ic decreases c) Vce decreases d) none of the mentioned
c Explanation: Vce decreases from 0.9 to 0.1 of the initial value whereas others increase.
c
See lessExplanation: Vce decreases from 0.9 to 0.1 of the initial value whereas others
increase.
Latch-up occurs in an IGBT when a) Vce reaches a certain value b) Ic reaches a certain value c) Ig reaches a certain value d) the device temperature reaches a certain value
b Explanation: Latch up occurs when the current through the device (Ic) collector current increases beyond a certain value.
b
See lessExplanation: Latch up occurs when the current through the device (Ic) collector current
increases beyond a certain value.
The static V-I curve of an IGBT is plotted with a) Vce as the parameter b) Ic as the parameter c) Vge as the parameter d) Ig as the parameter
c Explanation: V-I curves are plotted for Ic vs Vce with the controlling parameter (Vge) as a parameter.
c
See lessExplanation: V-I curves are plotted for Ic vs Vce with the controlling parameter (Vge) as
a parameter.
A latched up IGBT can be turned off by a) forced commutation of current b) forced commutation of voltage c) use of a snubber circuit d) none of the mentioned
a Explanation: Forced commutation of current is the only way to turn off a latched up IGBT.
a
See lessExplanation: Forced commutation of current is the only way to turn off a latched up
IGBT.
When latch-up occurs in an IGBT a) Ig is no longer controllable b) Ic is no longer controllable c) the device turns off d) Ic increases to a very high value
b Explanation: After latch-up the collector emitter current is no longer in control of the gate terminal.
b
See lessExplanation: After latch-up the collector emitter current is no longer in control of the gate
terminal.
The major drawback of the first generation IGBTs was that, they had a) latch-up problems b) noise & secondary breakdown problems c) sluggish operation d) latch-up & secondary breakdown problems
d Explanation: The earlier IGBT’s had latch-up problems (device cannot turn off even after the gate signal is removed), and secondary breakdown problems (in which a localized hotspot in the device goes into thermal runaway and burns the device out at high currents).
d
See lessExplanation: The earlier IGBT’s had latch-up problems (device cannot turn off even after
the gate signal is removed), and secondary breakdown problems (in which a localized
hotspot in the device goes into thermal runaway and burns the device out at high
currents).
The structure of the IGBT is a a) P-N-P structure connected by a MOS gate b) N-N-P-P structure connected by a MOS gate c) P-N-P-N structure connected by a MOS gate d) N-P-N-P structure connected by a MOS gate
c Explanation: The IGBT is a semiconductor device with four alternating layers (P-N-P-N) that are controlled by a metal-oxide-semiconductor (MOS) gate structure without regenerative action.
c
See lessExplanation: The IGBT is a semiconductor device with four alternating layers (P-N-P-N)
that are controlled by a metal-oxide-semiconductor (MOS) gate structure without
regenerative action.
The controlled parameter in IGBT is the a) IG b) VGE c) IC d) VCE
c Explanation: The controlling parameter is the gate to collector current.
c
See lessExplanation: The controlling parameter is the gate to collector current.
The voltage blocking capability of the IGBT is determined by the a) injection layer b) body layer c) metal used for the contacts d) drift layer
d Explanation: The drift layer which is a n– layer determines the voltage blocking capabilities
d
See lessExplanation: The drift layer which is a n–
layer determines the voltage blocking
capabilities