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109. The body of an IGBT consists of a a) p-layer b) n-layer c) p-n layer d) metal
Answer: a Explanation: IGBT has a p-n-p structure with fingers of n + layers into the p layer. The p layer has the largest cross section and forms the body of the IGBT.
Answer: a
Explanation: IGBT has a p-n-p structure with fingers of n
+
layers into the p layer. The p
layer has the largest cross section and forms the body of the IGBT.
See less110. At present, the state-of-the-art semiconductor devices are begin manufactured using a) Semiconducting Diamond b) Gallium-Arsenide c) Germanium d) Silicon-Carbide
Answer: d Explanation: All of the above mentioned can be used but Si-Ca has certain advantages over the other materials.
Answer: d
Explanation: All of the above mentioned can be used but Si-Ca has certain advantages
over the other materials.
See less54.A power transistor is a _________ device. a) two terminal, bipolar, voltage controlled b) two terminal, unipolar, current controlled c) three terminal, unipolar, voltage controlled d) three terminal, bipolar, current controlled
Answer: d Explanation: Power transistor is simply many BJT’s connected in series parallel on a single silicon chip for power applications. It is a three terminal, bipolar, current controlled device.
Answer: d
Explanation: Power transistor is simply many BJT’s connected in series parallel on a
single silicon chip for power applications. It is a three terminal, bipolar, current controlled
device.
See less55.In a power transistor, _________ is the controlling parameter. a) V BE b) V CE c) I B d) I C55.In a power transistor, _________ is the controlling parameter. a) V BE b) V CE c) I B d) I C
Answer: c Explanation: The base current controls the collector current. Hence, the base current Ib is the controlling parameter.
Answer: c
Explanation: The base current controls the collector current. Hence, the base current Ib
is the controlling parameter.
See less56.In a power transistor, the I B vs V BE curve is a) a parabolic curve b) an exponentially decaying curve c) resembling the diode curve d) a straight line Y = I B
Answer: c Explanation: The B-E junction of a BJT resembles a p-n junction diode, hence the curve
Answer: c
Explanation: The B-E junction of a BJT resembles a p-n junction diode, hence the curve
See less61.For a power transistor, if the forward current gain α = 0.97, then β = ? a) 0.03 b) 2.03 c) 49.24 d) 32.33
Answer: d Explanation: Use the relation α = β/(β+1).
Answer: d
Explanation: Use the relation α = β/(β+1).
See less64.High frequency operation of any device is limited by the a) forward voltage rating b) switching losses c) thermal conductivity d) heat Sink arrangements
Answer: b Explanation: Lower the switching losses higher the frequency of operation of the device.
Answer: b
Explanation: Lower the switching losses higher the frequency of operation of the device.
See less