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The forward safe operating area (FSOA) pertains to the operation when a) the device is fired at a 50% Duty cycle b) the device is forward-biased c) the device is operated on AC d) the device is operated on DC
Answer: c Explanation: For reliable operation the collector current & voltage must remain within the SOA curves.
Answer: c
Explanation: For reliable operation the collector current & voltage must remain within the
SOA curves.
See lessFor a transistor, the safe operating area (SOA) is a plot of a) Ib versus Vce b) Ib versus Ic c) Ic versus Vce d) Ic versus time
Answer: c Explanation: For reliable operation the collector current & voltage must remain within the SOA curve
Answer: c
Explanation: For reliable operation the collector current & voltage must remain within the
SOA curve
See less. At present, the state-of-the-art semiconductor devices are begin manufactured using a) Semiconducting Diamond b) Gallium-Arsenide c) Germanium d) Silicon-Carbide
Answer: d Explanation: All of the above mentioned can be used but Si-Ca has certain advantages over the other materials.
Answer: d
Explanation: All of the above mentioned can be used but Si-Ca has certain advantages
over the other materials.
See less109. The body of an IGBT consists of a a) p-layer b) n-layer c) p-n layer d) metal
Explanation: IGBT has a p-n-p structure with fingers of n+ layers into the p layer. The p layer has the largest cross section and forms the body of the IGBT.
Explanation: IGBT has a p-n-p structure with fingers of n+
See lesslayers into the p layer. The p
layer has the largest cross section and forms the body of the IGBT.
108. An IGBT is also know as a) MOIGT (Metal oxide insulated gate transistor) b) COMFET (Conductively modulated FET) c) GEMFET (Grain modulated FET) d) all of the mentioned
Answer: d Explanation: All of the above mentioned are alternate names of IGBTs.
Answer: d
See lessExplanation: All of the above mentioned are alternate names of IGBTs.
approximate equivalent circuit of an IGBT consists of a) a BJT & a MOSFET b) a MOSFET & a MCT c) two BJTs d) two MOSFETs
Answer: a Explanation: Gate of the MOSFET forms the gate terminal of the IGBT, the source of MOSFET is connected to the base of the BJT and drain to the collector.
Answer: a
Explanation: Gate of the MOSFET forms the gate terminal of the IGBT, the source of
MOSFET is connected to the base of the BJT and drain to the collector.
See lessChoose the correct statement a) IGBTs have higher switching losses as compared to BJTs b) IGBTs have secondary breakdown problems c) IGBTs have lower gate drive requirements d) IGBTs are current controlled devices
Answer: c Explanation: Due to its high gate impedance, IGBTs require less gate drive current.
Answer: c
Explanation: Due to its high gate impedance, IGBTs require less gate drive current.
See less107. The approximate equivalent circuit of an IGBT consists of a) a BJT & a MOSFET b) a MOSFET & a MCT c) two BJTs d) two MOSFETs
Answer c
Answer c
See less107. The approximate equivalent circuit of an IGBT consists of a) a BJT & a MOSFET b) a MOSFET & a MCT c) two BJTs d) two MOSFETs
Answer c
Answer c
See less106. Choose the correct statement a) IGBTs have higher switching losses as compared to BJTs b) IGBTs have secondary breakdown problems c) IGBTs have lower gate drive requirements d) IGBTs are current controlled devices
Answer c
Answer c
See less