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05. In an IGBT, during the turn-on time a) Vge decreases b) Ic decreases c) Vce decreases d) none of the mentioned
Answer: b
Answer: b
See lessLatch-up occurs in an IGBT when a) Vce reaches a certain value b) Ic reaches a certain value c) Ig reaches a certain value d) the device temperature reaches a certain value
Answer: c Explanation: V-I curves are plotted for Ic vs Vce with the controlling parameter (Vge)
Explanation: V-I curves are plotted for Ic vs Vce with the controlling parameter (Vge)
03. The static V-I curve of an IGBT is plotted with a) Vce as the parameter b) Ic as the parameter c) Vge as the parameter d) Ig as the parameter
Answer: c
Answer: c
See lesslatched up IGBT can be turned off by
Answer: a
Answer: a
1. When latch-up occurs in an IGBT a) Ig is no longer controllable b) Ic is no longer controllable c) the device turns off d) Ic increases to a very high value
Answer: b
Answer: b
See less100. The major drawback of the first generation IGBTs was that, they had a) latch-up problems b) noise & secondary breakdown problems c) sluggish operation d) latch-up & secondary breakdown problems
Answer: d
Answer: d
See less99.The structure of the IGBT is a a) P-N-P structure connected by a MOS gate b) N-N-P-P structure connected by a MOS gate c) P-N-P-N structure connected by a MOS gate d) N-P-N-P structure connected by a MOS gate
Answer c
Answer c
See less95.The controlling parameter in IGBT is the a) IG b) VGE c) IC d) VCE
Answer: b
Answer: b
In the output characteristics of a MOSFET with low values of Vds, the value of the on-state resistance is a) Vds/Ig b) Vds/Id c) 0 d) ∞
Answer b
Answer b
See lessThe output characteristics of a MOSFET, is a plot of a) Id as a function of Vgs with Vds as a parameter b) Id as a function of Vds with Vgs as a parameter c) Ig as a function of Vgs with Vds as a parameter d) Ig as a function of Vds with Vgs as a parameter
Answer b
Answer b
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