The structure of the IGBT is a a) P-N-P structure connected by a MOS gate b) N-N-P-P structure connected by a MOS gate c) P-N-P-N structure connected by a MOS gate d) N-P-N-P structure connected by a MOS gate
The structure of the IGBT is a a) P-N-P structure connected by a MOS gate b) N-N-P-P structure connected by a MOS gate c) P-N-P-N structure connected by a MOS gate d) N-P-N-P structure connected by a MOS gate
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Explanation: The IGBT is a semiconductor device with four alternating layers (P-N-P-N)
that are controlled by a metal-oxide-semiconductor (MOS) gate structure without
regenerative action.