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When latch-up occurs in an IGBT a) Ig is no longer controllable b) Ic is no longer controllable c) the device turns off d) Ic increases to a very high value
b Explanation: After latch-up the collector emitter current is no longer in control of the gate terminal.
b
See lessExplanation: After latch-up the collector emitter current is no longer in control of the gate
terminal.
The major drawback of the first generation IGBTs was that, they had a) latch-up problems b) noise & secondary breakdown problems c) sluggish operation d) latch-up & secondary breakdown problems
d Explanation: The earlier IGBT’s had latch-up problems (device cannot turn off even after the gate signal is removed), and secondary breakdown problems (in which a localized hotspot in the device goes into thermal runaway and burns the device out at high currents).
d
See lessExplanation: The earlier IGBT’s had latch-up problems (device cannot turn off even after
the gate signal is removed), and secondary breakdown problems (in which a localized
hotspot in the device goes into thermal runaway and burns the device out at high
currents).
The structure of the IGBT is a a) P-N-P structure connected by a MOS gate b) N-N-P-P structure connected by a MOS gate c) P-N-P-N structure connected by a MOS gate d) N-P-N-P structure connected by a MOS gate
c Explanation: The IGBT is a semiconductor device with four alternating layers (P-N-P-N) that are controlled by a metal-oxide-semiconductor (MOS) gate structure without regenerative action.
c
See lessExplanation: The IGBT is a semiconductor device with four alternating layers (P-N-P-N)
that are controlled by a metal-oxide-semiconductor (MOS) gate structure without
regenerative action.
The controlled parameter in IGBT is the a) IG b) VGE c) IC d) VCE
c Explanation: The controlling parameter is the gate to collector current.
c
See lessExplanation: The controlling parameter is the gate to collector current.
The voltage blocking capability of the IGBT is determined by the a) injection layer b) body layer c) metal used for the contacts d) drift layer
d Explanation: The drift layer which is a n– layer determines the voltage blocking capabilities
d
See lessExplanation: The drift layer which is a n–
layer determines the voltage blocking
capabilities
In IGBT, the n– layer above the p+ layer is called as the a) drift layer b) injection layer c) body layer d) collector Layer
a Explanation: It is called as the drift layer because its thickness determines the voltage blocking capabilities of the device.
a
See lessExplanation: It is called as the drift layer because its thickness determines the voltage
blocking capabilities of the device.
The controlling parameter in IGBT is the a) IG b) VGE c) IC d) VCE
b Explanation: The controlling parameter is the gate to emitter voltage, as the device is a voltage controlled device.
b
See lessExplanation: The controlling parameter is the gate to emitter voltage, as the device is a
voltage controlled device.
In IGBT, the p+ layer connected to the collector terminal is called as the a) drift layer b) injection layer c) body layer d) collector Layer
b Explanation: It is called as a injection layer, because it injects holes into the n– layer.
b
See lessExplanation: It is called as a injection layer, because it injects holes into the n–
layer.
The three terminals of the IGBT are a) base, emitter & collector b) gate, source & drain c) gate, emitter & collector d) base, source & drain
c Explanation: IGBT is a three terminal device. It has a gate, a emitter & a collector.
c
See lessExplanation: IGBT is a three terminal device. It has a gate, a emitter & a collector.
IGBT & BJT both posses ___ a) low on-state power losses b) high on-state power losses c) low switching losses d) high input impedance
a Explanation: Low on state power loss is one of the best parameters of both BJT & the IGBT
a
See lessExplanation: Low on state power loss is one of the best parameters of both BJT & the
IGBT