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IGBT possess a) low input impedance b) high input impedance c) high on-state resistance d) second breakdown problems
b Explanation: Like MOSFET IGBT possess high input impedance
b
See lessExplanation: Like MOSFET IGBT possess high input impedance
The N-channel MOSFET is considered better than the P-channel MOSFET due to its a) low noise levels b) TTL compatibility c) lower input impedance d) faster operation
d Explanation: The N-channel are faster than the P-channel type.
d
See lessExplanation: The N-channel are faster than the P-channel type.
The basic advantage of the CMOS technology is that a) It is easily available b) It has small size c) It has lower power consumption d) It has better switching capabilities
c Explanation: Complementary MOS consumes very less power as compared to all the earlier devices.
c
See lessExplanation: Complementary MOS consumes very less power as compared to all the
earlier devices.
How does the MOSFET differ from the JFET? a) JFET has a p-n junction b) They are both the same c) JFET is small in size d) MOSFET has a base terminal
a Explanation: None.
a
See lessExplanation: None.
For a MOSFET Vgs=3V, Idss=5A, and Id=2A. Find the pinch of voltage Vp a) 4.08 b) 8.16 c) 16.32 d) 0V
b Explanation: Use Id = Idd x [1-Vgs/Vp]2 .
b
See lessExplanation: Use Id = Idd x [1-Vgs/Vp]2
.
Consider an ideal MOSFET. If Vgs = 0V, then Id = ? a) Zero b) Maximum c) Id(on) d) Idd
a Explanation: Gate current = 0 so device is off (ideally).
a
See lessExplanation: Gate current = 0 so device is off (ideally).
Choose the correct statement a) MOSFET has a positive temperature co-efficient b) MOSFET has a high gate circuit impedance c) MOSFET is a voltage controlled device d) All of the mentioned
d Explanation: MOSFETs are voltage controlled devices. They have high gate circuit impedance and are PTC devices.
d
See lessExplanation: MOSFETs are voltage controlled devices. They have high gate circuit
impedance and are PTC devices.
Which among the following devices is the most suited for high frequency applications? a) BJT b) IGBT c) MOSFET d) SCR
c Explanation: MOSFET has the least switching losses among the rest of the devices.
c
See lessExplanation: MOSFET has the least switching losses among the rest of the devices.
Choose the correct statement a) MOSFET suffers from secondary breakdown problems b) MOSFET has lower switching losses as compared to other devices c) MOSFET has high value of on-state resistance as compared to other devices d) All of the mentioned
b Explanation: MOSFET has lower switching losses due to its unipolar nature & less turn off time. All of the other statements are false.
b
See lessExplanation: MOSFET has lower switching losses due to its unipolar nature & less turn
off time. All of the other statements are false.
At turn-on the initial delay or turn on delay is the time required for the a) input inductance to charge to the threshold value b) input capacitance to charge to the threshold value c) input inductance to discharge to the threshold value d) input capacitance to discharge to the threshold value
b Explanation: It is the time required for the input capacitance to charge to the threshold value, which depends on the device configuration. The device can start conducting only after this time.
b
See lessExplanation: It is the time required for the input capacitance to charge to the threshold
value, which depends on the device configuration. The device can start conducting only
after this time.