Sign Up to our social questions and Answers Engine to ask questions, answer people’s questions, and connect with other people.
Login to our social questions & Answers Engine to ask questions answer people’s questions & connect with other people.
Lost your password? Please enter your email address. You will receive a link and will create a new password via email.
Please briefly explain why you feel this question should be reported.
Please briefly explain why you feel this answer should be reported.
Please briefly explain why you feel this user should be reported.
A power BJT is used as a power control switch by biasing it in the cut off region (off state) or in the saturation region (on state). In the on state a) both the base-emitter & base-collector junctions are forward biased b) the base-emitter junction is reverse biased, and the base collector junction is forward biased c) the base-emitter junction is forward biased, and the base collector junction is reversed biased d) both the base-collector & the base-emitter junctions are reversed biased
a Explanation: When base-emitter & base-collector junctions are forward biased only than both the p-n junctions are forward biased and the device is on.
a
See lessExplanation: When base-emitter & base-collector junctions are forward biased only than
both the p-n junctions are forward biased and the device is on.
The value of β is given by the expression a) IC/IB b) IC/IE c) IE/IC d) IE/IB
a Explanation: Collector current by the base current is beta, its value is in the range 50 to 300.
a
See lessExplanation: Collector current by the base current is beta, its value is in the range 50 to
300.
The forward current gain α is given by a) IC/IB b) IC/IE c) IE/IC d) IE/IB
b Explanation: Collector current by emitter current is the current gain, its value is close to one but never greater than
b
See lessExplanation: Collector current by emitter current is the current gain, its value is close to
one but never greater than
For a power transistor, if the base current IB is increased keeping VCE constant, then a) IC increases b) IC decreases c) IC remains constant d) none of the mentioned
a Explanation: Ic is directly proportional to Ic.
a
See lessExplanation: Ic is directly proportional to Ic.
.In a power transistor, the IB vs VBE curve is a) a parabolic curve b) an exponentially decaying curve c) resembling the diode curve d) a straight line Y = IB
c Explanation: The B-E junction of a BJT resembles a p-n junction diode, hence the curve.
c
See lessExplanation: The B-E junction of a BJT resembles a p-n junction diode, hence the curve.
In a power transistor, _________ is the controlling parameter. a) VBE b) VCE c) IB d) IC
c Explanation: The base current controls the collector current. Hence, the base current Ib is the controlling parameter.
c
See lessExplanation: The base current controls the collector current. Hence, the base current Ib
is the controlling parameter.
.A power transistor is a _________ device. a) two terminal, bipolar, voltage controlled b) two terminal, unipolar, current controlled c) three terminal, unipolar, voltage controlled d) three terminal, bipolar, current controlled
d Explanation: Power transistor is simply many BJT’s connected in series parallel on a single silicon chip for power applications. It is a three terminal, bipolar, current controlled device
d
See lessExplanation: Power transistor is simply many BJT’s connected in series parallel on a
single silicon chip for power applications. It is a three terminal, bipolar, current controlled
device
In a power transistor, ____ is the controlled parameter. a) VBE b) VCE c) IB d) IC
b Explanation: It has three layers p-n-p or n-p-n forming two p-n junctions.
b
See lessExplanation: It has three layers p-n-p or n-p-n forming two p-n junctions.
.A power transistor is a a) three layer, three junction device b) three layer, two junction device c) two layer, one junction device d) four layer, three junction device
b Explanation: It has three layers p-n-p or n-p-n forming two p-n junctions
b
See lessExplanation: It has three layers p-n-p or n-p-n forming two p-n junctions
Which of the following devices does not belong to the transistor family? a) IGBT b) MOSFET c) GTO d) BJT
c Explanation: GTO is gate turn off transistor, it belongs to the Thyristor family. All the other devices belong to the transistor family
c
See lessExplanation: GTO is gate turn off transistor, it belongs to the Thyristor family. All the
other devices belong to the transistor family