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.Shown below is the diagram of an ideal super diode. When the input voltage Vin is negative, then the output voltage Vout = ? a) Vout/Vin b) Vin c) 0 d) Vin * Rl
c Explanation: When the input voltage is negative, there would be a negative voltage on the diode so it works like an open circuit. Hence no current flows through the load and Vout is zero.
c
See lessExplanation: When the input voltage is negative, there would be a negative voltage on
the diode so it works like an open circuit. Hence no current flows through the load and
Vout is zero.
In the equilibrium state the barrier, potential across a unbiased germanium diode is __________ a) 0.3 V b) 0.7 V c) 1.7 V d) 0 V
a Explanation: Barrier potential is due to the charges that establish an electric field across the two junctions.
a
See lessExplanation: Barrier potential is due to the charges that establish an electric field across
the two junctions.
In the equilibrium state, the barrier potential across a unbiased silicon diode is _________ a) 0.3 V b) 0.7 V c) 1.3 V d) 0 V
b Explanation: Barrier potential is due to the charges that establish an electric field across the two junctions.
b
See lessExplanation: Barrier potential is due to the charges that establish an electric field across
the two junctions.
In case of a practical p-n junction diode, the rise in the junction temperature ___________ a) decreases the width of the depletion region b) increases the barrier potential c) increases the width of the depletion region d) width of the depletion region increases but the barrier potential remains constant
a Explanation: The rise in temperature excites the charges, which go & recombine with the charges in the depletion region decreasing its width. Higher the temperature, lesser is the E.M.F required to turn on the device.
a
See lessExplanation: The rise in temperature excites the charges, which go & recombine with the
charges in the depletion region decreasing its width. Higher the temperature, lesser is
the E.M.F required to turn on the device.
When the p-n junction diode is reversed biased, the width of the depletion region __________ a) increases b) decreases c) remains Constant d) none of the above mentioned
a Explanation: When reverse biased depletion layer increases until the breakdown value is reached.
a
See lessExplanation: When reverse biased depletion layer increases until the breakdown value is
reached.
When the p-n junction diode is forward biased, the width of the depletion region __________ a) increases b) decreases c) remains Constant d) increases than Decreases
b Explanation: When forward biased depletion layer decreases & finally it collapses to allow the current flow.
b
See lessExplanation: When forward biased depletion layer decreases & finally it collapses to
allow the current flow.
.In an AC-DC converter, a diode might be used as a a) voltage source b) phase angle controller c) freewheeling Diode d) filter
c Explanation: In converters diodes are used to feed the energy back to the load in case of an inductive load.
c
See lessExplanation: In converters diodes are used to feed the energy back to the load in case of
an inductive load.
For a p-n junction diode, the peak inverse current & the reverse recovery time are dependent on a) inverse voltage b) forward Voltage c) di/dt d) all of the above mentioned
c Explanation: It only depends upon the number stored charges which depends upon the rate of change of current.
c
See lessExplanation: It only depends upon the number stored charges which depends upon the
rate of change of current.
Even after the forward current reduces to zero value, a practical diode continues to conduct in the reverse direction for a while due to the a) resistance of the diode b) high junction temperature c) stored charges in the depletion region d) none of the mentioned
c Explanation: Due to the stored charges during the earlier current flow, even when the current reduces to zero due to some structural properties of the device, the device takes time to sweep out the stored charges.
c
See lessExplanation: Due to the stored charges during the earlier current flow, even when the
current reduces to zero due to some structural properties of the device, the device takes
time to sweep out the stored charges.
The power loss in which of the following cases would be the maximum? a) When both V & I are minimum b) When both V & I are maximum c) When only V is maximum d) When only I is maximum
b Explanation: P=VI Hence, it would be maximum when both V and I are maximum.
b
See lessExplanation: P=VI Hence, it would be maximum when both V and I are maximum.