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For a power transistor, the average power loss during the delay time can be given by the equation
b Explanation: During the delay time only, the collector current flows & base to emitter voltage is zero. Hence the average power can be found, simply by integrating it over the total delay time & dividing by the base time period.
b
See lessExplanation: During the delay time only, the collector current flows & base to emitter
voltage is zero. Hence the average power can be found, simply by integrating it over the total delay time & dividing by the base time period.
The instantaneous power loss during the delay time of a transistor is given by
a Explanation: During the delay time only the collector current flows & base to emitter voltage is zero.
a
See lessExplanation: During the delay time only the collector current flows & base to emitter
voltage is zero.
High frequency operation of any device is limited by the
b Explanation: Lower the switching losses higher the frequency of operation of the device.
b
See lessExplanation: Lower the switching losses higher the frequency of operation of the device.
For a power transistor, which of the following relations is true?
a Explanation: Practically speaking Ie = Ib+Ic. Ie is the highest as it is the sum of the collector and base currents. The base current is the smallest.
a
See lessExplanation: Practically speaking Ie = Ib+Ic. Ie is the highest as it is the sum of the
collector and base currents. The base current is the smallest.
For a power transistor, the average power loss during the delay time can be given by the equation
b Explanation: During the delay time only, the collector current flows & base to emitter voltage is zero. Hence the average power can be found, simply by integrating it over the total delay time & dividing by the base time period.
b
See lessExplanation: During the delay time only, the collector current flows & base to emitter
voltage is zero. Hence the average power can be found, simply by integrating it over the total delay time & dividing by the base time period.
The instantaneous power loss during the delay time of a transistor is given by
a Explanation: During the delay time only the collector current flows & base to emitter voltage is zero.
a
See lessExplanation: During the delay time only the collector current flows & base to emitter
voltage is zero.
High frequency operation of any device is limited by the
b Explanation: Lower the switching losses higher the frequency of operation of the device.
b
See lessExplanation: Lower the switching losses higher the frequency of operation of the device.
For a power transistor, which of the following relations is true?
a Explanation: Practically speaking Ie = Ib+Ic. Ie is the highest as it is the sum of the collector and base currents. The base current is the smallest.
a
See lessExplanation: Practically speaking Ie = Ib+Ic. Ie is the highest as it is the sum of the
collector and base currents. The base current is the smallest.
For a power transistor, if the forward current gain α = 0.97, then β = ?
d Explanation: Use the relation α = β/(β+1).
d
See lessExplanation: Use the relation α = β/(β+1).
A power BJT is used as a power control switch by biasing it in the cut off region (off state) or in the saturation region (on state). In the on state
a Explanation: When base-emitter & base-collector junctions are forward biased only than both the p-n junctions are forward biased and the device is on.
a
See lessExplanation: When base-emitter & base-collector junctions are forward biased only than both the p-n junctions are forward biased and the device is on.