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In case of a practical p-n junction diode, the rise in the junction temperature ___________
a Explanation: The rise in temperature excites the charges, which go & recombine with the charges in the depletion region decreasing its width. Higher the temperature, lesser is the E.M.F required to turn on the device.
a
See lessExplanation: The rise in temperature excites the charges, which go & recombine with the charges in the depletion region decreasing its width. Higher the temperature, lesser is the E.M.F required to turn on the device.
When the p-n junction diode is reversed biased, the width of the depletion region
a Explanation: When reverse biased depletion layer increases until the breakdown value is reached.
a
See lessExplanation: When reverse biased depletion layer increases until the breakdown value is reached.
When the p-n junction diode is forward biased, the width of the depletion region
b Explanation: When forward biased depletion layer decreases & finally it collapses to allow the current flow.
b
See lessExplanation: When forward biased depletion layer decreases & finally it collapses to
allow the current flow.
In an AC-DC converter, a diode might be used as a
c Explanation: In converters diodes are used to feed the energy back to the load in case of an inductive load.
c
See lessExplanation: In converters diodes are used to feed the energy back to the load in case of an inductive load.
For a p-n junction diode, the peak inverse current & the reverse recovery time are dependent on
c Explanation: It only depends upon the number stored charges which depends upon the rate of change of current.
c
See lessExplanation: It only depends upon the number stored charges which depends upon the rate of change of current.
Even after the forward current reduces to zero value, a practical diode continues to conduct in the reverse direction for a while due to the
c Explanation: Due to the stored charges during the earlier current flow, even when the current reduces to zero due to some structural properties of the device, the device takes time to sweep out the stored charges.
c
See lessExplanation: Due to the stored charges during the earlier current flow, even when the
current reduces to zero due to some structural properties of the device, the device takes time to sweep out the stored charges.
The power loss in which of the following cases would be the maximum?
b Explanation: P=VI Hence, it would be maximum when both V and I are maximum.
b
See lessExplanation: P=VI Hence, it would be maximum when both V and I are maximum.
If V & I are the forward voltage & current respectively, then the power loss across the diode would be
d Explanation: Simply power (P) is voltage into current i.e. VI
d
See lessExplanation: Simply power (P) is voltage into current i.e. VI
A power diode with small softness factor (S-factor) has
b Explanation: Peak reverse current is independent of S-factor smaller the value of Sfactor larger the oscillatory over voltage.
b
See lessExplanation: Peak reverse current is independent of S-factor smaller the value of Sfactor larger the oscillatory over voltage.
The peak inverse current IP for a power diode is given by the expression
c Explanation: The leakage current is the reveres recovery time (t) into the rate of change of current.
c
See lessExplanation: The leakage current is the reveres recovery time (t) into the rate of change of current.