Answer: b Explanation: They are efficient due to their higher transition speeds.
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Answer: a Explanation: When base-emitter & base-collector junctions are forward biased only than both the p-n junctions are forward biased and the device is on.
Answer: a
Explanation: When base-emitter & base-collector junctions are forward biased only than
both the p-n junctions are forward biased and the device is on.
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Answer: a Explanation: Collector current by the base current is beta, its value is in the range 50 to 300.
Answer: a
Explanation: Collector current by the base current is beta, its value is in the range 50 to
300.
Answer: b Explanation: Collector current by emitter current is the current gain, its value is close to one but never greater than.
Answer: b
Explanation: Collector current by emitter current is the current gain, its value is close to
one but never greater than.
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Answer: c Explanation: The B-E junction of a BJT resembles a p-n junction diode, hence the curve.
Answer: c
Explanation: The B-E junction of a BJT resembles a p-n junction diode, hence the curve.
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Answer: c Explanation: The base current controls the collector current. Hence, the base current Ib is the controlling parameter.
Answer: c
Explanation: The base current controls the collector current. Hence, the base current Ib
is the controlling parameter.
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Answer: a Explanation: Practically speaking Ie = Ib+Ic. Ie is the highest as it is the sum of the collector and base currents. The base current is the smallest.
Answer: a
Explanation: Practically speaking Ie = Ib+Ic. Ie is the highest as it is the sum of the
collector and base currents. The base current is the smallest.
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