To make a signal diode suitable for high current & high voltage carrying applications with minimum losses, ________ a) a lightly doped n layer is grown between the two p & n layers b) a heavily doped n layer is grown between the two p & n layers c) a lightly doped p layer is grown between the two p & n layers d) a heavily doped player is grown between the two p & n layers
To make a signal diode suitable for high current & high voltage carrying applications with minimum losses, ________ a) a lightly doped n layer is grown between the two p & n layers b) a heavily doped n layer is grown between the two p & n layers c) a lightly doped p layer is grown between the two p & n layers d) a heavily doped player is grown between the two p & n layers
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Answer: a
Explanation: The above process simply the one used to manufacture power diodes.