Answer: a Explanation: The above process simply the one used to manufacture power diodes.
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Answer: b Explanation: Large reverse breakdown voltage is desirable whereas others will increases the losses
Answer: b
Explanation: Large reverse breakdown voltage is desirable whereas others will increases the losses
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Answer: d Explanation: A potential difference is established across the junctions due to recombination of holes & electrons. This growing filed (barrier potential) stops the further diffusion.
Answer: d
Explanation: A potential difference is established across the junctions due to recombination of holes & electrons. This growing filed (barrier potential) stops the further diffusion.
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Answer: c Explanation: When p & n region come together diffusion takes places & a depletion region is established with opposite charges on both the sides of the junction.
Answer: c
Explanation: When p & n region come together diffusion takes places & a depletion
region is established with opposite charges on both the sides of the junction.
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Answer: d Explanation: Holes are the minority charge carriers in n-type material & vice-versa
Answer: d
Explanation: Holes are the minority charge carriers in n-type material & vice-versa
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Answer: d Explanation: Diode is a two terminal device, anode & cathode are the two terminals
Answer: d
Explanation: Diode is a two terminal device, anode & cathode are the two terminals
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Answer: c Explanation: Holes are the majority charge carriers in p-type material & vice-versa.
Answer: c
Explanation: Holes are the majority charge carriers in p-type material & vice-versa.
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Answer: b Explanation: First in the forward region & Third in the reverse biased mode.
Answer: b
Explanation: First in the forward region & Third in the reverse biased mode.
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