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The controlled parameter in IGBT is the a) IG b) VGE c) IC d) VCE
Explanation: The controlling parameter is the gate to collector current.
Explanation: The controlling parameter is the gate to collector current.
See lessThe voltage blocking capability of the IGBT is determined by the a) injection layer b) body layer c) metal used for the contacts d) drift layer
Explanation: The drift layer which is a n– layer determines the voltage blocking capabilities.
Explanation: The drift layer which is a n–
See lesslayer determines the voltage blocking
capabilities.
In IGBT, the n– layer above the p+ layer is called as the a) drift layer b) injection layer c) body layer d) collector Layer
Explanation: It is called as the drift layer because its thickness determines the voltage blocking capabilities of the device.
Explanation: It is called as the drift layer because its thickness determines the voltage
See lessblocking capabilities of the device.
The controlling parameter in IGBT is the a) IG b) VGE c) IC d) VC
Explanation: The controlling parameter is the gate to emitter voltage, as the device is a voltage controlled device.
Explanation: The controlling parameter is the gate to emitter voltage, as the device is a
See lessvoltage controlled device.
In IGBT, the p+ layer connected to the collector terminal is called as the a) drift layer b) injection layer c) body layer d) collector Layer
Explanation: It is called as a injection layer, because it injects holes into the n– layer.
Explanation: It is called as a injection layer, because it injects holes into the n–
See lesslayer.
The three terminals of the IGBT are a) base, emitter & collector b) gate, source & drain c) gate, emitter & collector d) base, source & drain
Explanation: IGBT is a three terminal device. It has a gate, a emitter & a collector
Explanation: IGBT is a three terminal device. It has a gate, a emitter & a collector
See lessIGBT & BJT both posses ___ a) low on-state power losses b) high on-state power losses c) low switching losses d) high input impedance
Explanation: Low on state power loss is one of the best parameters of both BJT & the IGBT
Explanation: Low on state power loss is one of the best parameters of both BJT & the
See lessIGBT
IGBT possess a) low input impedance b) high input impedance c) high on-state resistance d) second breakdown problems
Explanation: Like MOSFET IGBT possess high input impedance
Explanation: Like MOSFET IGBT possess high input impedance
See lessThe N-channel MOSFET is considered better than the P-channel MOSFET due to its a) low noise levels b) TTL compatibility c) lower input impedance d) faster operation
Explanation: The N-channel are faster than the P-channel type
Explanation: The N-channel are faster than the P-channel type
See lessThe basic advantage of the CMOS technology is that a) It is easily available b) It has small size c) It has lower power consumption d) It has better switching capabilities
Explanation: Complementary MOS consumes very less power as compared to all the earlier devices.
Explanation: Complementary MOS consumes very less power as compared to all the
See lessearlier devices.