Explanation: The drift layer which is a n– layer determines the voltage blocking capabilities.
Explanation: The drift layer which is a n–
layer determines the voltage blocking
capabilities.
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Explanation: The drift layer which is a n– layer determines the voltage blocking capabilities.
Explanation: The drift layer which is a n–
layer determines the voltage blocking
capabilities.
Explanation: It is called as the drift layer because its thickness determines the voltage blocking capabilities of the device.
Explanation: It is called as the drift layer because its thickness determines the voltage
blocking capabilities of the device.
Explanation: The controlling parameter is the gate to emitter voltage, as the device is a voltage controlled device.
Explanation: The controlling parameter is the gate to emitter voltage, as the device is a
voltage controlled device.
Explanation: It is called as a injection layer, because it injects holes into the n– layer.
Explanation: It is called as a injection layer, because it injects holes into the n–
layer.
Explanation: IGBT is a three terminal device. It has a gate, a emitter & a collector
Explanation: IGBT is a three terminal device. It has a gate, a emitter & a collector
See lessExplanation: Low on state power loss is one of the best parameters of both BJT & the IGBT
Explanation: Low on state power loss is one of the best parameters of both BJT & the
IGBT
Explanation: Like MOSFET IGBT possess high input impedance
Explanation: Like MOSFET IGBT possess high input impedance
See lessExplanation: The N-channel are faster than the P-channel type
Explanation: The N-channel are faster than the P-channel type
See less
Explanation: The controlling parameter is the gate to collector current.
Explanation: The controlling parameter is the gate to collector current.
See less