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A power diode with small softness factor (S-factor) has
Answer: b Explanation: Peak reverse current is independent of S-factor smaller the value of S- factor larger the oscillatory over voltage.
Answer: b
See lessExplanation: Peak reverse current is independent of S-factor smaller the value of S-
factor larger the oscillatory over voltage.
The peak inverse current IP for a power diode is given by the expression
Explanation: The leakage current is the reveres recovery time (t) into the rate of change of current.
Explanation: The leakage current is the reveres recovery time (t) into the rate of change
See lessof current.
In case of an ideal power diode, the leakage current flows from
Answer: d Explanation: Leakage current does not flow in IDEAL diode.
Answer: d
See lessExplanation: Leakage current does not flow in IDEAL diode.
A diode is said to be forward biased when the
Answer: b Explanation: A is positive w.r.t the K when the device is forward biased.
Answer: b
See lessExplanation: A is positive w.r.t the K when the device is forward biased.
A diode is said to be reversed biased when the
Answer: a Explanation: K is positive w.r.t the A when the device is reversed biased.
Answer: a
See lessExplanation: K is positive w.r.t the A when the device is reversed biased.
The V-I Characteristics of the diode lie in the
Answer: b Explanation: First in the forward region & Third in the reverse biased mode.
Answer: b
See lessExplanation: First in the forward region & Third in the reverse biased mode.
Power diode is __________
Answer: b Explanation: It has two terminals anode and cathode same as that of a ordinary diode. In fact, a power diode is nothing but a signal diode with a extra layer.
Answer: b
See lessExplanation: It has two terminals anode and cathode same as that of a ordinary diode. In
fact, a power diode is nothing but a signal diode with a extra layer.
.An ideal power diode must have
Answer: b Explanation: Large reverse breakdown voltage is desirable whereas others will increases the losses.
Answer: b
See lessExplanation: Large reverse breakdown voltage is desirable whereas others will
increases the losses.
0. Which of the following is true in case of a forward biased p-n junction diode?
Answer: a Explanation: The diode is forward biased, positive is connected to p & vice-versa, as such batter provides EMF to drive electrons from n-region to p-region.
Answer: a
See lessExplanation: The diode is forward biased, positive is connected to p & vice-versa, as
such batter provides EMF to drive electrons from n-region to p-region.
A p-type semiconductor material is doped with ____________ impurities whereas a n-type semiconductor material is doped with __________ impurities
Answer: b Explanation: Higher the value of anode-cathode forward voltage, lower the gate requirements of the device. Also, the forward resistance of the device is always constant as long as the junction temperature is constant.
Answer: b
See lessExplanation: Higher the value of anode-cathode forward voltage, lower the gate
requirements of the device. Also, the forward resistance of the device is always constant
as long as the junction temperature is constant.