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xavier

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  1. Asked: August 27, 2024In: Education

    At present, the state-of-the-art semiconductor devices are begin manufactured using

    xavier
    xavier Begginer
    Added an answer on September 2, 2024 at 1:31 pm

    Answer: d Explanation: All of the above mentioned can be used but Si-Ca has certain advantages over the other materials.

    Answer: d
    Explanation: All of the above mentioned can be used but Si-Ca has certain advantages
    over the other materials.

    See less
      • 0
  2. Asked: August 27, 2024In: Education

    An IGBT is also know as

    xavier
    xavier Begginer
    Added an answer on September 2, 2024 at 1:30 pm

    nswer: d Explanation: All of the above mentioned are alternate names of IGBTs.

    nswer: d
    Explanation: All of the above mentioned are alternate names of IGBTs.

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      • 0
  3. Asked: August 27, 2024In: Education

    The approximate equivalent circuit of an IGBT consists of

    xavier
    xavier Begginer
    Added an answer on September 2, 2024 at 1:29 pm

    Answer: a Explanation: Gate of the MOSFET forms the gate terminal of the IGBT, the source of MOSFET is connected to the base of the BJT and drain to the collecto

    Answer: a
    Explanation: Gate of the MOSFET forms the gate terminal of the IGBT, the source of
    MOSFET is connected to the base of the BJT and drain to the collecto

    See less
      • 0
  4. Asked: August 31, 2024In: Education

    Choose the correct statement

    xavier
    xavier Begginer
    Added an answer on September 2, 2024 at 1:28 pm

    Answer: c Explanation: Due to its high gate impedance, IGBTs require less gate drive current.

    Answer: c
    Explanation: Due to its high gate impedance, IGBTs require less gate drive current.

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      • 0
  5. Asked: August 27, 2024In: Education

    In an IGBT, during the turn-on time

    xavier
    xavier Begginer
    Added an answer on September 1, 2024 at 10:55 pm

    Answer: c Explanation: Vce decreases from 0.9 to 0.1 of the initial value whereas others increase.

    Answer: c
    Explanation: Vce decreases from 0.9 to 0.1 of the initial value whereas others
    increase.

    See less
      • 0
  6. Asked: August 22, 2024In: Education

    Latch-up occurs in an IGBT when

    xavier
    xavier Begginer
    Added an answer on September 1, 2024 at 10:54 pm

    Answer: b Explanation: Latch up occurs when the current through the device (Ic) collector current increases beyond a certain value.

    Answer: b
    Explanation: Latch up occurs when the current through the device (Ic) collector current
    increases beyond a certain value.

    See less
      • 0
  7. Asked: August 27, 2024In: Education

    The static V-I curve of an IGBT is plotted with

    xavier
    xavier Begginer
    Added an answer on September 1, 2024 at 10:54 pm

    Answer: c Explanation: V-I curves are plotted for Ic vs Vce with the controlling parameter (Vge) as a parameter.

    Answer: c
    Explanation: V-I curves are plotted for Ic vs Vce with the controlling parameter (Vge) as
    a parameter.

    See less
      • 0
  8. Asked: August 27, 2024In: Education

    A latched up IGBT can be turned off by

    xavier
    xavier Begginer
    Added an answer on September 1, 2024 at 10:53 pm

    Answer: a Explanation: Forced commutation of current is the only way to turn off a latched up IGBT.

    Answer: a
    Explanation: Forced commutation of current is the only way to turn off a latched up
    IGBT.

    See less
      • 0
  9. Asked: August 27, 2024In: Education

    When latch-up occurs in an IGBT

    xavier
    xavier Begginer
    Added an answer on September 1, 2024 at 10:52 pm

    Answer: b Explanation: After latch-up the collector emitter current is no longer in control of the gate terminal.

    Answer: b
    Explanation: After latch-up the collector emitter current is no longer in control of the gate
    terminal.

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      • 0
  10. Asked: August 22, 2024In: Education

    The structure of the IGBT is a

    xavier
    xavier Begginer
    Added an answer on August 31, 2024 at 10:05 pm

    Answer: b Explanation: The controlling parameter is the gate to emitter voltage, as the device is a voltage controlled device.

    Answer: b
    Explanation: The controlling parameter is the gate to emitter voltage, as the device is a
    voltage controlled device.

    See less
      • 0
1 … 5 6 7 8 9 … 13

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