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The major drawback of the first generation Insulated Gate Bipolar Transistors (IGBTs) was that they had high on-state voltage drop. This high voltage drop led to inefficiencies during operation, as more energy was lost as heat rather than being effectively used for power switching. This inefficiency was a significant issue in applications requiring high efficiency and low thermal output, such as in power conversion and control systems. Over time, improvements and innovations have led to newer generations of IGBTs with lower on-state voltage drops, improved switching characteristics, and better overall efficiency.
Answer: d
Explanation: The earlier IGBT’s had latch-up problems (device cannot turn off even after
the gate signal is removed), and secondary breakdown problems (in which a localized
hotspot in the device goes into thermal runaway and burns the device out at high
currents).