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For an SCR the total turn-on time consists of i) Delay time ii) Rise time and iii) Spread time During the delay time the
Answer: a Explanation: Initially for a fraction of a microsecond (delay time) after the gate signal is applied the anode current only flows near the gate terminal where the gate current density is maximum, as the gate current takes some time to spread all over the cross section of the device
Answer: a Explanation: Initially for a fraction of a microsecond (delay time) after the gate signal is applied the anode current only flows near the gate terminal where the gate current density is maximum, as the gate current takes some time to spread all over the cross section of the device
See lessDuring the transition time or turn-on time
Answer: c Explanation: During the turn on time, the voltage across the SCR is going down and the current through it is slowly rising as it is going into the conduction mode.
Answer: c Explanation: During the turn on time, the voltage across the SCR is going down and the current through it is slowly rising as it is going into the conduction mode.
See less________ are semiconductor thyristor devices which can be turned-on by light of appropriate wavelengths
Answer: d Explanation: LASCR stands for light activated SCRs, which can be turned on in made to conduct by firing appropriate light pulses at its gate region
Answer: d Explanation: LASCR stands for light activated SCRs, which can be turned on in made to conduct by firing appropriate light pulses at its gate region
See lessFor a forward conducting SCR device, as the forward anode to cathode voltage is increased
Answer: b Explanation: Higher the value of anode-cathode forward voltage, lower the gate requirements of the device. Also, the forward resistance of the device is always constant as long as the junction temperature is constant.
Answer: b Explanation: Higher the value of anode-cathode forward voltage, lower the gate requirements of the device. Also, the forward resistance of the device is always constant as long as the junction temperature is constant.
See lessThe forward break over voltage is the
Answer: b Explanation: It is the forward voltage at which the middle junction breaks down without any gate signal and pushes the device into the conducting state
Answer: b Explanation: It is the forward voltage at which the middle junction breaks down without any gate signal and pushes the device into the conducting state
See lessThe forward safe operating area (FSOA) pertains to the operation when
Answer: b Explanation: The FSOA is for forward biased operations. The FSOA is plotted for AC as well as DC for different duty cycles. Hence, option (b) is the most appropriate choice.
Answer: b Explanation: The FSOA is for forward biased operations. The FSOA is plotted for AC as well as DC for different duty cycles. Hence, option (b) is the most appropriate choice.
See lessLatch-up occurs in an IGBT when
Answer: b Explanation: Latch up occurs when the current through the device (Ic) collector current increases beyond a certain value.
Answer: b Explanation: Latch up occurs when the current through the device (Ic) collector current increases beyond a certain value.
See lessThe static V-I curve of an IGBT is plotted with
Answer: c Explanation: V-I curves are plotted for Ic vs Vce with the controlling parameter (Vge) as a parameter
Answer: c Explanation: V-I curves are plotted for Ic vs Vce with the controlling parameter (Vge) as a parameter
See lessWhen latch-up occurs in an IGBT
Answer: b Explanation: After latch-up the collector emitter current is no longer in control of the gate terminal.
Answer: b Explanation: After latch-up the collector emitter current is no longer in control of the gate terminal.
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