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The approximate equivalent circuit of an IGBT consists of
Answer: a Explanation: Gate of the MOSFET forms the gate terminal of the IGBT, the source of MOSFET is connected to the base of the BJT and drain to the collector.
Answer: a
See lessExplanation: Gate of the MOSFET forms the gate terminal of the IGBT, the source of
MOSFET is connected to the base of the BJT and drain to the collector.
Choose the correct statement
Answer: c Explanation: Due to its high gate impedance, IGBTs require less gate drive current.
Answer: c
Explanation: Due to its high gate impedance, IGBTs require less gate drive current.
See lessIn an IGBT, during the turn-on time
Answer: c Explanation: Vce decreases from 0.9 to 0.1 of the initial value whereas others increase.
Answer: c
See lessExplanation: Vce decreases from 0.9 to 0.1 of the initial value whereas others
increase.
The static V-I curve of an IGBT is plotted with
Answer: c Explanation: V-I curves are plotted for Ic vs Vce with the controlling parameter (Vge) as a parameter.
Answer: c
See lessExplanation: V-I curves are plotted for Ic vs Vce with the controlling parameter (Vge) as
a parameter.
A latched up IGBT can be turned off by
Answer: a Explanation: Forced commutation of current is the only way to turn off a latched up IGBT.
Answer: a
See lessExplanation: Forced commutation of current is the only way to turn off a latched up
IGBT.
When latch-up occurs in an IGBT
Answer: b Explanation: After latch-up the collector emitter current is no longer in control of the gate terminal.
Answer: b
See lessExplanation: After latch-up the collector emitter current is no longer in control of the gate
terminal.
The major drawback of the first generation IGBTs was that, they had
Answer: d Explanation: The earlier IGBT’s had latch-up problems (device cannot turn off even after the gate signal is removed), and secondary breakdown problems (in which a localized hotspot in the device goes into thermal runaway and burns the device out at high currents).
Answer: d
See lessExplanation: The earlier IGBT’s had latch-up problems (device cannot turn off even after
the gate signal is removed), and secondary breakdown problems (in which a localized
hotspot in the device goes into thermal runaway and burns the device out at high
currents).
A power transistor is a _________ device.
Answer: b Explanation: It has three layers p-n-p or n-p-n forming two p-n junctions
Answer: b
See lessExplanation: It has three layers p-n-p or n-p-n forming two p-n junctions
Which of the following devices does not belong to the transistor family?
Answer: c Explanation: GTO is gate turn off transistor, it belongs to the Thyristor family. All the other devices belong to the transistor family.
Answer: c
See lessExplanation: GTO is gate turn off transistor, it belongs to the Thyristor family. All the
other devices belong to the transistor family.
Zener diodes allow a current to flow in the reverse direction, when the
Answer: a Explanation: Zener diode has voltage regulating property. When voltage reaches above a certain value (Zener voltage), current starts to flow in the reverse direction.
Answer: a
See lessExplanation: Zener diode has voltage regulating property. When voltage reaches above
a certain value (Zener voltage), current starts to flow in the reverse direction.