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In a certain power electronics application, it is required that the voltage at the load terminals is to be kept within a certain range of voltages only. Among the device listed below, which would be the most ideal choice for this application?
Answer: c Explanation: Zener diode is used as a voltage regulating device.
Answer: c
See lessExplanation: Zener diode is used as a voltage regulating device.
Schottky diodes are also called as
Answer: b Explanation: Due to the metal used to carry the current, it is also called as a hot carrier diode.
Answer: b
See lessExplanation: Due to the metal used to carry the current, it is also called as a hot carrier
diode.
.In an AC-DC converter, a diode might be used as a
Answer: c Explanation: In converters diodes are used to feed the energy back to the load in case of an inductive load.
Answer: c
See lessExplanation: In converters diodes are used to feed the energy back to the load in case of
an inductive load.
.In the equilibrium state, the barrier potential across a unbiased silicon diode is _________
Answer: b Explanation: Barrier potential is due to the charges that establish an electric field across the two junctions.
Answer: b
See lessExplanation: Barrier potential is due to the charges that establish an electric field across
the two junctions.
In case of a practical p-n junction diode, the rise in the junction temperature ___________
Answer: a Explanation: The rise in temperature excites the charges, which go & recombine with the charges in the depletion region decreasing its width. Higher the temperature, lesser is the E.M.F required to turn on the device
Answer: a
See lessExplanation: The rise in temperature excites the charges, which go & recombine with the
charges in the depletion region decreasing its width. Higher the temperature, lesser is
the E.M.F required to turn on the device
When the p-n junction diode is reversed biased, the width of the depletion region __________
Answer: a Explanation: When reverse biased depletion layer increases until the breakdown value is reached.
Answer: a
Explanation: When reverse biased depletion layer increases until the breakdown value is
reached.
See lessWhen the p-n junction diode is forward biased, the width of the depletion region __________
Answer: b Explanation: When forward biased depletion layer decreases & finally it collapses to allow the current flow.
Answer: b
See lessExplanation: When forward biased depletion layer decreases & finally it collapses to
allow the current flow.
The peak inverse current IP for a power diode is given by the expression
Answer: c Explanation: The leakage current is the reveres recovery time (t) into the rate of change of current.
Answer: c
See lessExplanation: The leakage current is the reveres recovery time (t) into the rate of change
of current.
.In case of an ideal power diode, the leakage current flows from
Answer: d Explanation: Leakage current does not flow in IDEAL diode
Answer: d
See lessExplanation: Leakage current does not flow in IDEAL diode
A diode is said to be forward biased when the
Answer: b Explanation: A is positive w.r.t the K when the device is forward biased
Answer: b
See lessExplanation: A is positive w.r.t the K when the device is forward biased