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A diode is said to be reversed biased when the
Answer: a Explanation: K is positive w.r.t the A when the device is reversed biased.
Answer: a
See lessExplanation: K is positive w.r.t the A when the device is reversed biased.
Power diode is __________
Answer: b Explanation: It has two terminals anode and cathode same as that of a ordinary diode. In fact, a power diode is nothing but a signal diode with a extra layer.
Answer: b
See lessExplanation: It has two terminals anode and cathode same as that of a ordinary diode. In
fact, a power diode is nothing but a signal diode with a extra layer.
To make a signal diode suitable for high current & high voltage carrying applications with minimum losses, ________
Answer: a Explanation: The above process simply the one used to manufacture power diodes.
Answer: a
See lessExplanation: The above process simply the one used to manufacture power diodes.
.An ideal power diode must have
Answer: b Explanation: Large reverse breakdown voltage is desirable whereas others will increases the losses.
Answer: b
See lessExplanation: Large reverse breakdown voltage is desirable whereas others will
increases the losses.
Which of the following is true in case of a forward biased p-n junction diode?
Answer: a Explanation: The diode is forward biased, positive is connected to p & vice-versa, as such batter provides EMF to drive electrons from n-region to p-region.
Answer: a
See lessExplanation: The diode is forward biased, positive is connected to p & vice-versa, as
such batter provides EMF to drive electrons from n-region to p-region.
When a physical contact between a p-region & n-region is established which of the following is most likely to take place?
Answer: c Explanation: When p & n region come together diffusion takes places & a depletion region is established with opposite charges on both the sides of the junction.
Answer: c
See lessExplanation: When p & n region come together diffusion takes places & a depletion
region is established with opposite charges on both the sides of the junction.
The MOSFET combines the areas of _______ & _________
Answer: a Explanation: It is an enhancement of the FET devices (field effect) using MOS technology.
Answer: a
See lessExplanation: It is an enhancement of the FET devices (field effect) using MOS
technology.
.Let’s say that a transistor is operating at the middle of the load line, then a decrease in the current gain would
Answer: b Explanation:The current gain would decreases the collector current, shifting the Q point below.
Answer: b
See lessExplanation:The current gain would decreases the collector current, shifting the Q point
below.
Which of the following relations is true for a BJT?
Answer: a Explanation: The collector & emitter current differ only by the base current, which is very very small.
Answer: a
See lessExplanation: The collector & emitter current differ only by the base current, which is very
very small.
.A 1mv of i/p gives an output of 1V, the voltage gain as such would be
Answer: c Explanation: 1V/1mv = 1000.
Answer: c
See lessExplanation: 1V/1mv = 1000.