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.A Schottky diode _____
Answer: b Explanation: Due to the metal-silicon junction there are no stored charges hence, no reverse recovery time, due to which the switching is faster.
Answer: b
See lessExplanation: Due to the metal-silicon junction there are no stored charges hence, no
reverse recovery time, due to which the switching is faster.
Which of the below mentioned statements is false regarding Schottky diodes?
Answer: c Explanation: The majority charge carriers in a Schottky diode are electrons not holes.
Answer: c
See lessExplanation: The majority charge carriers in a Schottky diode are electrons not holes.
Which of the following diodes uses a metal-semiconductor junction?
Answer: c Explanation: Schottky diode uses a Al-Semiconductor junction.
Answer: c
See lessExplanation: Schottky diode uses a Al-Semiconductor junction.
Which of the following diodes uses a metal-semiconductor junction?
Answer: c Explanation: Schottky diode uses a Al-Semiconductor junction.
Answer: c
See lessExplanation: Schottky diode uses a Al-Semiconductor junction.
.In order to reduce the reverse recovery time of the diodes, __________ is carried out.
Answer: b Explanation: Platinum & gold doping improves the performance of the devices.
Answer: b
Explanation: Platinum & gold doping improves the performance of the devices.
See less.In the equilibrium state the barrier, potential across a unbiased germanium diode is __________
Answer: a Explanation: Barrier potential is due to the charges that establish an electric field across the two junctions.
Answer: a
See lessExplanation: Barrier potential is due to the charges that establish an electric field across
the two junctions.
.In the equilibrium state, the barrier potential across a unbiased silicon diode is
Answer: b Explanation: Barrier potential is due to the charges that establish an electric field across the two junctions.
Answer: b
See lessExplanation: Barrier potential is due to the charges that establish an electric field across
the two junctions.
In case of a practical p-n junction diode, the rise in the junction temperature
Answer: a Explanation: The rise in temperature excites the charges, which go & recombine with the charges in the depletion region decreasing its width. Higher the temperature, lesser is the E.M.F required to turn on the device.
Answer: a
See lessExplanation: The rise in temperature excites the charges, which go & recombine with the
charges in the depletion region decreasing its width. Higher the temperature, lesser is
the E.M.F required to turn on the device.
When the p-n junction diode is reversed biased, the width of the depletion region
Answer: a Explanation: When reverse biased depletion layer increases until the breakdown value is reached.
Answer: a
See lessExplanation: When reverse biased depletion layer increases until the breakdown value is
reached.
When the p-n junction diode is forward biased, the width of the depletion region
Answer: b Explanation: When forward biased depletion layer decreases & finally it collapses to allow the current flow.
Answer: b
See lessExplanation: When forward biased depletion layer decreases & finally it collapses to
allow the current flow.