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In an IGBT, during the turn-on time
c Explanation: Vce decreases from 0.9 to 0.1 of the initial value whereas others increase.
c
Explanation: Vce decreases from 0.9 to 0.1 of the initial value whereas others increase.
See lessLatch-up occurs in an IGBT when
b Explanation: Latch up occurs when the current through the device (Ic) collector current increases beyond a certain value.
b
Explanation: Latch up occurs when the current through the device (Ic) collector current increases beyond a certain value.
See lessThe static V-I curve of an IGBT is plotted with
c Explanation: V-I curves are plotted for Ic vs Vce with the controlling parameter (Vge) as a parameter.
c
Explanation: V-I curves are plotted for Ic vs Vce with the controlling parameter (Vge) as a parameter.
See lessA latched up IGBT can be turned off by
a Explanation: Forced commutation of current is the only way to turn off a latched up IGBT.
a
Explanation: Forced commutation of current is the only way to turn off a latched up IGBT.
See lessWhen latch-up occurs in an IGBT
b Explanation: After latch-up the collector emitter current is no longer in control of the gate terminal.
b
Explanation: After latch-up the collector emitter current is no longer in control of the gate terminal.
See lessThe major drawback of the first generation IGBTs was that, they had
d Explanation: The earlier IGBT’s had latch-up problems (device cannot turn off even after the gate signal is removed), and secondary breakdown problems (in which a localized hotspot in the device goes into thermal runaway and burns the device out at high currents).
d
Explanation: The earlier IGBT’s had latch-up problems (device cannot turn off even after the gate signal is removed), and secondary breakdown problems (in which a localized hotspot in the device goes into thermal runaway and burns the device out at high currents).
See lessThe structure of the IGBT is a
c Explanation: The IGBT is a semiconductor device with four alternating layers (P-N-P-N) that are controlled by a metal-oxide-semiconductor (MOS) gate structure without regenerative action.
c
Explanation: The IGBT is a semiconductor device with four alternating layers (P-N-P-N) that are controlled by a metal-oxide-semiconductor (MOS) gate structure without regenerative action.
See lessThe controlled parameter in IGBT is the
c Explanation: The controlling parameter is the gate to collector current.
c
Explanation: The controlling parameter is the gate to collector current.
See lessThe voltage blocking capability of the IGBT is determined by the
d Explanation: The drift layer which is a n– layer determines the voltage blocking capabilities.
d
Explanation: The drift layer which is a n– layer determines the voltage blocking capabilities.
See lessIn IGBT, the n– layer above the p+ layer is called as the
a Explanation: It is called as the drift layer because its thickness determines the voltage blocking capabilities of the device.
a
Explanation: It is called as the drift layer because its thickness determines the voltage blocking capabilities of the device.
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