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The controlling parameter in IGBT is the
b Explanation: The controlling parameter is the gate to emitter voltage, as the device is a voltage controlled device.
b
See lessExplanation: The controlling parameter is the gate to emitter voltage, as the device is a voltage controlled device.
In IGBT, the p+ layer connected to the collector terminal is called as the
b Explanation: It is called as a injection layer, because it injects holes into the n– layer.
b
See lessExplanation: It is called as a injection layer, because it injects holes into the n– layer.
The three terminals of the IGBT are
c Explanation: IGBT is a three terminal device. It has a gate, a emitter & a collector.
c
Explanation: IGBT is a three terminal device. It has a gate, a emitter & a collector.
See lessIGBT & BJT both posses ___
a Explanation: Low on state power loss is one of the best parameters of both BJT & the IGBT.
a
Explanation: Low on state power loss is one of the best parameters of both BJT & the IGBT.
See lessIGBT possess
b Explanation: Like MOSFET IGBT possess high input impedance.
b
Explanation: Like MOSFET IGBT possess high input impedance.
See lessThe N-channel MOSFET is considered better than the P-channel MOSFET due to its
d Explanation: The N-channel are faster than the P-channel type.
d
Explanation: The N-channel are faster than the P-channel type.
See lessThe basic advantage of the CMOS technology is that
c Explanation: Complementary MOS consumes very less power as compared to all the earlier devices.
c
Explanation: Complementary MOS consumes very less power as compared to all the earlier devices.
See lessHow does the MOSFET differ from the JFET?
a Explanation: None.
a
Explanation: None.
See lessFor a MOSFET Vgs=3V, Idss=5A, and Id=2A. Find the pinch of voltage Vp
b Explanation: Use Id = Idd x [1-Vgs/Vp]2.
b
Explanation: Use Id = Idd x [1-Vgs/Vp]2.
See lessConsider an ideal MOSFET. If Vgs = 0V, then Id = ?
a Explanation: Gate current = 0 so device is off (ideally).
a
Explanation: Gate current = 0 so device is off (ideally).
See less