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Which among the following devices is the most suited for high frequency applications?
c Explanation: MOSFET has the least switching losses among the rest of the devices.
c
Explanation: MOSFET has the least switching losses among the rest of the devices.
See lessAt turn-on the initial delay or turn on delay is the time required for the
b Explanation: It is the time required for the input capacitance to charge to the threshold value, which depends on the device configuration. The device can start conducting only after this time.
b
Explanation: It is the time required for the input capacitance to charge to the threshold value, which depends on the device configuration. The device can start conducting only after this time.
See lessIn the output characteristics of a MOSFET with low values of Vds, the value of the on-state resistance is
b Explanation: The o/p characteristics Is a plot of Id verses Vds, which for low values of Vds is almost constant. Hence, the on-state resistance is constant & the slop is its constant value.
b
Explanation: The o/p characteristics Is a plot of Id verses Vds, which for low values of Vds is almost constant. Hence, the on-state resistance is constant & the slop is its constant value.
See lessWhich of the following terminals does not belong to the MOSFET?
c Explanation: MOSFET is a three terminal device D, G & S.
c
See lessExplanation: MOSFET is a three terminal device D, G & S.
The MOSFET combines the areas of _______ & _________
a Explanation: It is an enhancement of the FET devices (field effect) using MOS technology.
a
See lessExplanation: It is an enhancement of the FET devices (field effect) using MOS
technology.
.Let’s say that a transistor is operating at the middle of the load line, then a decrease in the current gain would
b Explanation:The current gain would decreases the collector current, shifting the Q point below.
b
See lessExplanation:The current gain would decreases the collector current, shifting the Q point
below.
Which of the following relations is true for a BJT?
a Explanation: The collector & emitter current differ only by the base current, which is very very small.
a
Explanation: The collector & emitter current differ only by the base current, which is very very small.
See lessA 1mv of i/p gives an output of 1V, the voltage gain as such would be
c Explanation: 1V/1mv = 1000.
c
Explanation: 1V/1mv = 1000.
See lessThe instantaneous power loss during the delay time of a transistor is given by
a Explanation: During the delay time only the collector current flows & base to emitter voltage is zero.
a
Explanation: During the delay time only the collector current flows & base to emitter voltage is zero.
See lessHigh frequency operation of any device is limited by the
b Explanation: Lower the switching losses higher the frequency of operation of the device.
b
Explanation: Lower the switching losses higher the frequency of operation of the device.
See less