Lost your password? Please enter your email address. You will receive a link and will create a new password via email.
Please briefly explain why you feel this question should be reported.
Please briefly explain why you feel this answer should be reported.
Please briefly explain why you feel this user should be reported.
The body of an Insulated Gate Bipolar Transistor (IGBT) consists mainly of three regions: the P+ substrate (collector), the N- drift region, and the P- body or well region. These regions form a sandwich structure that combines the input structure of a MOSFET (metal-oxide-semiconductor field-effect transistor) on the top part (gate, oxide, and source regions) for easy control with the output power capability of a bipolar transistor (emitter and collector regions) at the bottom, providing high current capability and low on-state voltage drop due to conductivity modulation.
Answer: a
Explanation: IGBT has a p-n-p structure with fingers of n+
layers into the p layer. The p
layer has the largest cross section and forms the body of the IGBT.