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xavier

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  1. Asked: August 19, 2024In: Education

    The finger voltage of an SCR is

    xavier
    xavier Begginer
    Added an answer on September 2, 2024 at 10:33 pm

    Answer: a Explanation: Finger voltage is the minimum value of Vak (anode to cathode voltage) to turn on the device with gate triggering, it is to be avoided for accidental turn-on of the device.

    Answer: a
    Explanation: Finger voltage is the minimum value of Vak (anode to cathode voltage) to
    turn on the device with gate triggering, it is to be avoided for accidental turn-on of the
    device.

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      • 0
  2. Asked: August 19, 2024In: Education

    The voltage safety factor (VSF) for an SCR is the ratio of

    xavier
    xavier Begginer
    Added an answer on September 2, 2024 at 10:32 pm

    Answer: c Explanation: It is peak repetitive reverse voltage/ the maximum value of input voltage(Vm).

    Answer: c
    Explanation: It is peak repetitive reverse voltage/ the maximum value of input
    voltage(Vm).

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      • 0
  3. Asked: August 14, 2024In: Education

    The gate-source voltage is Es = 16 V and the load line has a slope of 128 V/A. Calculate the gate current for an average gate power dissipation of 0.5 W.

    xavier
    xavier Begginer
    Added an answer on September 2, 2024 at 10:28 pm

    Answer: a Explanation: Load line is nothing but Rs Es = 16V Vg.Ig = 0.5 Rs = 128 We have Es = Ig x Rs + Vg.

    Answer: a
    Explanation: Load line is nothing but Rs
    Es = 16V
    Vg.Ig = 0.5
    Rs = 128
    We have Es = Ig x Rs + Vg.

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      • 0
  4. Asked: August 19, 2024In: Education

    Latching current for an SCR is 100 mA, DC source of 200 V is also connected from the SCR to the L load. Compute the minimum width of the gate pulse required to turn on the device. Take L = 0.2 H.

    xavier
    xavier Begginer
    Added an answer on September 2, 2024 at 10:27 pm

    Answer: b Explanation: For L load, E = L di/dt I = E/L t Therefore, 0.100 = 200t/0.2 T = 100 μsec.

    Answer: b
    Explanation: For L load, E = L di/dt
    I = E/L t
    Therefore, 0.100 = 200t/0.2
    T = 100 μsec.

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      • 0
  5. Asked: August 19, 2024In: Education

    The two transistor model of the SCR can obtained by

    xavier
    xavier Begginer
    Added an answer on September 2, 2024 at 10:26 pm

    Answer: d Explanation: The two transistor model consists of p-n-p and n-p-n transistors, of which the middle n-p layer is common in both the transistors.

    Answer: d
    Explanation: The two transistor model consists of p-n-p and n-p-n transistors, of which
    the middle n-p layer is common in both the transistors.

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      • 0
  6. Asked: August 14, 2024In: Education

    For an SCR, the gate-cathode characteristic has a slop of 130. The gate power dissipation is 0.5 watts. Find Ig

    xavier
    xavier Begginer
    Added an answer on September 2, 2024 at 10:26 pm

    nswer: c Explanation: Vg/Ig = 130 .. (given) Vg.Ig = 0.5 watts .. (given) use both the given data & find the gate current.

    nswer: c
    Explanation: Vg/Ig = 130 .. (given)
    Vg.Ig = 0.5 watts .. (given)
    use both the given data & find the gate current.

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      • 0
  7. Asked: August 19, 2024In: Education

    The average gate power dissipation for an SCR is 0.5 Watts the voltage applied to the gate is Vg = 10 V. What is the maximum value of current Ig for safe operation

    xavier
    xavier Begginer
    Added an answer on September 2, 2024 at 10:24 pm

    Answer: c Explanation: Vg.Ig = 0.5 W, the power dissipation mustn’t exceed the average power dissipation.

    Answer: c
    Explanation: Vg.Ig = 0.5 W, the power dissipation mustn’t exceed the average power
    dissipation.

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      • 0
  8. Asked: August 19, 2024In: Education

    Higher the magnitude of the gate pulse

    xavier
    xavier Begginer
    Added an answer on September 2, 2024 at 10:23 pm

    Answer: a Explanation: Lesser time is required to inject the charges & turn on the device with higher gate pulse magnitude.

    Answer: a
    Explanation: Lesser time is required to inject the charges & turn on the device with
    higher gate pulse magnitude.

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      • 0
  9. Asked: August 19, 2024In: Education

    A tangent drawn from the Y-axis to the Pavg on the gate characteristics gives the value of the

    xavier
    xavier Begginer
    Added an answer on September 2, 2024 at 10:22 pm

    Answer: b Explanation: It gives the min gate to source resistance

    Answer: b
    Explanation: It gives the min gate to source resistance

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      • 0
  10. Asked: August 19, 2024In: Education

    The area under the curve of the gate characteristics of thyristor gives the

    xavier
    xavier Begginer
    Added an answer on September 2, 2024 at 10:21 pm

    Answer: d Explanation: As the gate characteristics is a plot of Ig vs Vg consisting of two curves one for the maximum values & other for the minimum the area between them gives the total average gate power dissipation. (A very important parameter in designing of the triggering circuits)

    Answer: d
    Explanation: As the gate characteristics is a plot of Ig vs Vg consisting of two curves one
    for the maximum values & other for the minimum the area between them gives the total
    average gate power dissipation. (A very important parameter in designing of the
    triggering circuits)

    See less
      • 0
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