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A Schottky diode has a lower forward voltage drop, faster switching speeds, and lower reverse recovery time compared to a p-n junction diode of the same rating. Additionally, Schottky diodes tend to have higher thermal stability and can handle higher frequencies due to their construction, which lacks a junction like in p-n diodes. However, Schottky diodes may have a lower reverse voltage rating and can be more susceptible to thermal runaway.
c
Explanation: Due to the metal-silicon junction there are no stored charges, hence no
reverse recovery time due to which the switching is faster.