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b
Explanation: Use Id = Idd x [1-Vgs/Vp]2
To find the pinch-off voltage (Vp) for a MOSFET, we can use the following formula associated with the saturation region of the device:
[
Id = Idss left( 1 – frac{Vgs – Vp}{Vgs} right)^2
]
Where:
– (Id) is the drain current (2A),
– (Idss) is the maximum drain current (5A),
– (Vgs) is the gate-source voltage (3V),
– (Vp) is the pinch-off voltage (what we are trying to find).
Rearranging the formula to solve for (Vp):
1. First, divide both sides by Idss:
[
frac{Id}{Idss} = left( 1 – frac{Vgs – Vp}{Vgs} right)^2
]
[
frac{2A}{5A} = left( 1 – frac{3V – Vp}{3V} right)^2
]
[
0.4 = left( 1 – frac{3V – Vp}{3V} right)^2
]
2. Taking the square root of both sides:
[
sqrt{0.4} = 1 – frac{3V – Vp}{3V}